Structure of the InP/SiO2interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95877
Reference10 articles.
1. Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s
2. Interface formation of deposited insulator layers on GaAs and InP
3. New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors
4. Traps at the deposited insulator-InP interface— a discussion of a possible cause
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Surface and interface study of SiO2-x coated InP/InGaAs/InGaAsP semiconductor laser microstructures processed in the soft KrF laser irradiation regime;SPIE Proceedings;2011-11-23
2. The influence of interfacial roughness on parallel transport at oxide–semiconductor and heterojunction interfaces;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1989-07
3. Oxide-free etching of (100) InP surfaces;Crystal Research and Technology;1989-04
4. Semiconductor surface passivation;Materials Science Reports;1988-01
5. On the Use of Electron Microscopy in the Study of Semiconductor Interfaces;Springer Proceedings in Physics;1987
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