Oxide-free etching of (100) InP surfaces
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference23 articles.
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3. X-Ray Photoelectron Spectroscopy Study of GaAs (001) and InP (001) Cleaning Procedures Prior to Molecular Beam Epitaxy
4. Selective epitaxy from the liquid phase on InP
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1. Low-temperature direct wafer bonding of GaAs/InP;Superlattices and Microstructures;2009-02
2. Surface treatment and electrical properties of directly wafer-bonded InP epilayer on GaAs substrate;Solid-State Electronics;2002-08
3. Wafer fusion: materials issues and device results;IEEE Journal of Selected Topics in Quantum Electronics;1997-06
4. Effects of storage time of epi-ready InP:Fe substrates on the quality of metalorganic vapour phase epitaxial grown InP;Journal of Crystal Growth;1995-01
5. Monitoring the organic cleaning process of InP crystals by contact-angle measurement;Semiconductor Science and Technology;1994-09-01
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