Characterization of electron emission from relaxed InAs quantum dots capped with InGaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1957124
Reference24 articles.
1. Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
2. Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy
3. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
4. Critical layer thickness for self-assembled InAs islands on GaAs
5. Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)
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1. Deep levels in metamorphic InAs/InGaAs quantum dot structures with different composition of the embedding layers;Semiconductor Science and Technology;2017-10-26
2. Sweeping-rate-dependent photocurrent of GaAs Schottky diode with strain relaxed InAs quantum dots;Japanese Journal of Applied Physics;2015-02-20
3. Compensation effect and differential capacitance analysis of electronic energy band structure in relaxed InAs quantum dots;Journal of Applied Physics;2010-09-15
4. Bimodel onset strain relaxation in InAs quantum dots with an InGaAs capping layer;Applied Physics Letters;2010-08-30
5. Modeling of Self-Assembled GeSi Nano-Dots and Corresponding Admittance Spectroscopy;Journal of Nanoscience and Nanotechnology;2010-08-01
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