Properties of the titanium related level in Cd0.96Zn0.04Te crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.367997
Reference37 articles.
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1. A critical analysis of investigation of deep levels in high-resistivity CdS single crystals by photoelectric transient spectroscopy;Semiconductors;2004-03
2. Electrical field effect on the optical threshold energy of donor and acceptor levels in chromium-doped GaP;Physica B: Condensed Matter;2003-08
3. Cadmium zinc telluride and its use as a nuclear radiation detector material;Materials Science and Engineering: R: Reports;2001-04
4. INFRAREDPHOTOCONDUCTIVITYSPECTRAOFDEEPLEVELS IN Zn0.04Cd0.96Te;Acta Physica Sinica;2001
5. Electrical and optical characteristics of deep levels in vanadium-doped Cd0.96Zn0.04Te materials by photoinduced current, capacitance, and photocapacitance transient spectroscopies;Journal of Applied Physics;2000-05
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