Photodissociation of dimethylaluminum hydride on Si(100) at 193 nm studied by x‐ray photoelectron spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352933
Reference20 articles.
1. Pyrolytic and photolytic dissociation of trimethylgallium on Si and Au substrates
2. Photodissociation of trimethylindium on Si(111) at 193 nm
3. UV‐laser photolysis of trimethylaluminum for Al film growth
4. Photoinduced Deposition of Aluminum Thin Film on Silicon Nitride and Oxide
5. Cross-sections of Molecules for Ionization by Electrons
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1. XPS investigation of the interaction between TiCl4(THF)2 and AlEt3 modified SiOx/Si(100) surfaces;Surface Science;2006-09
2. Disproportionation of dimethylalane on aluminum surfaces. Part I. Experimental studies;Surface Science;2001-08
3. Time-Dependent X-Ray Photoelectron Spectroscopy Observed for Dimethylaluminum Hydride Adsorbed on S i O 2;Japanese Journal of Applied Physics;1997-08-01
4. Carbon Contamination in Synchrotron-Radiation-Stimulated Al Deposition Using a Low Temperature Condensed Layer of Dimethyl Aluminum Hydride;Japanese Journal of Applied Physics;1996-12-30
5. Photon energy dependence of synchrotron radiation induced growth suppression and initiation in Al chemical vapor deposition II. Surface analysis by Auger electron spectroscopy;Applied Surface Science;1996-11
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