Ferroionic inversion of spin polarization in a spin-memristor-Reference-Cited by-同舟云学术

Ferroionic inversion of spin polarization in a spin-memristor

Published:2021-03-01 Issue:3 Volume:9 Page:031110
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Rouco V.¹^ORCID,Gallego F.¹²,Hernandez-Martin D.¹^ORCID,Sanchez-Manzano D.¹^ORCID,Tornos J.¹,Beltran J. I.¹³,Cabero M.⁴,Cuellar F.¹^ORCID,Arias D.¹,Sanchez-Santolino G.¹³^ORCID,Mompean F. J.²⁵,Garcia-Hernandez M.²⁵,Rivera-Calzada A.¹⁵,Varela M.¹³,Muñoz M. C.⁵⁶,Leon C.¹⁵^ORCID,Sefrioui Z.¹⁵^ORCID,Santamaria J.¹⁵^ORCID

Affiliation:

1. GFMC, Universidad Complutense de Madrid, 28040 Madrid, Spain

2. 2D-Foundry Group, Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, 28049 Madrid, Spain

3. Instituto Pluridisciplinar, Universidad Complutense de Madrid, 28040 Madrid, Spain

4. Centro Nacional de Microscopia Electronica, Universidad Complutense, 28040 Madrid, Spain

5. Unidad Asociada UCM/CSIC, “Laboratorio de Heteroestructuras con Aplicación en Spintrónica”, 28040 Madrid, Spain

6. Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, 28049 Madrid, Spain

Funder

European Commission

Ministerio de Economía, Industria y Competitividad, Gobierno de Espaaña

Ministerio de Ciencia, Innovación y Universidades

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039030

Reference42 articles.

1. Beyond CMOS computing with spin and polarization

2. Scalable energy-efficient magnetoelectric spin–orbit logic

3. Non-volatile electric control of spin–charge conversion in a SrTiO3 Rashba system

4. Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles

5. Giant Electroresistance in Ferroelectric Tunnel Junctions

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