Ge‐doped p‐type epitaxial GaAs for microwave device application
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1654494
Reference12 articles.
1. Quantum efficiency of GaAs electroluminescent diodes
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3. Fabrication and noise performance of high-power GaAs IMPATTS
4. The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase Epitaxy
5. The Growth of Ge-GaAs and GaP-Si Heterojunctions by Liquid Phase Epitaxy
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1. Germanium‐ and tellurium‐doped GaAs for non‐alloyed p‐type and n‐type ohmic contacts;Applied Physics Letters;1995-08-14
2. Solubility and point defect-dopant interactions in gallium arsenide—III;Journal of Physics and Chemistry of Solids;1979-01
3. Liquid phase epitaxial growth of gallium arsenide on an etched substrate;Materials Research Bulletin;1976-08
4. Epitaxy;Semiconducting Devices;1976
5. High-efficiency p–n junction GaAs IMPATT devices;Electronics Letters;1975
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