Zinc‐Diffused GaAs Electroluminescent Diodes with Long Operating Life
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1659164
Reference5 articles.
1. Quantum efficiency of GaAs electroluminescent diodes
2. Aging effects in GaAs electroluminescent diodes
3. Use of a Terminal System for Data Acquisition
4. EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°K
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1. Semiconductors at IBM: Physics, Novel Devices, and Materials Science;IBM Journal of Research and Development;1981-09
2. Degradation of light-emitting diodes (Review);Journal of Applied Spectroscopy;1980-11
3. Degradation of GaP Red LED's Depending on the Donor Concentration in the n-Region;Japanese Journal of Applied Physics;1979-03
4. Enhanced diffusion mechanisms;Radiation Effects;1978-01
5. Early Appreciation in Zinc-Diffused GaAs Electroluminescent Infrared Diodes;13th International Reliability Physics Symposium;1975-04
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