Quantitative C-V study of the electric-field-assisted generation of mobile holes-Reference-Cited by-同舟云学术

Quantitative C-V study of the electric-field-assisted generation of mobile holes

Published:2019-11-28 Issue:20 Volume:126 Page:204501
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yu A. R.¹,Liu S. B.²,Zeng Q.³,Yi R. C.²,Yu X. X.²^ORCID,Hou X. Y.²^ORCID,Zhong G. Y.¹^ORCID

Affiliation:

1. Department of Materials Science, Fudan University, Shanghai 200433, China

2. State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai 200433, China

3. School of Material Engineering, Shanghai University of Engineering Science, Shanghai 201620, China

Funder

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5121862

Reference45 articles.

1. Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material

2. Enhanced hole injection and transport in molybdenum-dioxide-doped organic hole-transporting layers

3. P-185: Low-Drive-Voltage OLEDs with a Buffer Layer Having Molybdenum Oxide

4. Highly power efficient organic light-emitting diodes with a p-doping layer

5. Low driving voltage and high stability organic light-emitting diodes with rhenium oxide-doped hole transporting layer

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