Enhanced Organic Thin-Film Transistor Stability by Preventing MoO<sub>3</sub> Diffusion with Metal/MoO<sub>3</sub>/Organic Multilayered Interface Source-Drain Contact-Reference-Cited by-同舟云学术

Enhanced Organic Thin-Film Transistor Stability by Preventing MoO₃ Diffusion with Metal/MoO₃/Organic Multilayered Interface Source-Drain Contact

Published:2022-12-21 Issue:1 Volume:15 Page:1704-1717
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yang Zhenxin¹,Guo Chunhua¹,Qin Lingping¹,Hu Jun-Tao¹,Luan Pengyan¹,Liang Zheng¹,Li Xiaoliang¹,Ding Huaiyi¹,Wang Deng-Ke¹²,Zhang Tao¹,Zhu Qiang¹²^ORCID,Lu Zheng-Hong¹²³^ORCID

Affiliation:

1. Key Laboratory of Yunnan Provincial Higher Education Institution for Optoelectronics Device Engineering, School of Physics and Astronomy, Yunnan University, Kunming650504, China

2. National Center for International Research on Photoelectric and Energy Materials, Yunnan University, Kunming650504, China

3. Department of Materials Science and Engineering, University of Toronto, TorontoM5S 3E4, Canada

Funder

Applied Basic Research Foundation of Yunnan Province

National Natural Science Foundation of China

Key Laboratory of Yunnan Provincial Higher Education Institutions for Optoelectronics Device Engineering

Xingdian Talent Plan of Yunnan Province

Yunnan Provincial Education Office Scientific Research Foundation Project

Publisher

American Chemical Society (ACS)

Subject

General Materials Science