Comparison of thin‐film transistors fabricated at low temperatures (≤600 °C) on as‐deposited and amorphized‐crystallized polycrystalline Si
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338949
Reference8 articles.
1. Stochastic model for grain size versus dose in implanted and annealed polycrystalline silicon films on SiO2
2. Implant‐dose dependence of grain size and {110} texture enhancements in polycrystalline Si films by seed selection through ion channeling
3. Low Temperature Polysilicon Super-Thin-Film Transistor (LSFT)
4. A Super Thin Film Transistor in Advanced Poly Si Films
5. Dopant segregation in polycrystalline silicon
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1. Er-doped polycrystalline silicon for light emission at λ=1.54 µm;Journal of Electronic Materials;2000-07
2. The effects of SiO2 barrier between active layer and substrate on the performance and reliability of polycrystalline silicon thin film transistors;Microelectronics Reliability;1998-12
3. On the characteristics of polycrystalline-silicon thin-film transistors; two-dimensional numerical analysis;International Journal of Electronics;1997-08
4. The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition;Thin Solid Films;1997-06
5. Thermal chemical vapor deposition of semiconductors for thin film transistor applications;Microelectronic Engineering;1994-08
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