Effect of N to Ga flux ratio on the GaN surface morphologies grown at high temperature by plasma-assisted molecular-beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1634388
Reference15 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
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3. Piezoelectric effect on Al0.35−δInδGa0.65N/GaN heterostructures
4. Spin splitting in modulation-dopedAlxGa1−xN/GaNheterostructures
5. Spatial distribution of the luminescence in GaN thin films
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