Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1365951
Reference11 articles.
1. Long-wavelength 256×256 GaAs/AlGaAs quantum well infrared photodetector (QWIP) palm-size camera
2. First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well
3. Normal incident long-wavelength quantum well infrared photodetectors using electron intersubband transitions
4. Vacancy-enhanced intermixing in highly strained InGaAs/GaAs multiple quantum well photodetector
5. How good is the polarization selection rule for intersubband transitions?
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1. Nature Allows High Sensitivity Thermal Imaging With Type-I Quantum Wells Without Optical Couplers: A Grating-Free Quantum Well Infrared Photodetector With High Conversion Efficiency;IEEE Journal of Quantum Electronics;2021-04
2. High-x InP/InxGa1−xAs quantum well infrared photodetector;Infrared Physics & Technology;2018-12
3. Identification of quantum confined interband transitions in type-II InAs/GaSb superlattices using polarization sensitive photocurrent spectroscopy;Applied Physics Letters;2012-11-26
4. Transverse electric dominant intersubband absorption in Si-doped GaInAsN∕GaAs quantum wells;Journal of Applied Physics;2006-02-15
5. Temperature control in InGaAs-based quantum well structures grown by molecular beam epitaxy on GaAs (100) and GaAs (111)B substrates;Journal of Crystal Growth;2002-12
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