Temperature effects on carbon and zinc incorporations in GaAs grown by low‐pressure metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338973
Reference12 articles.
1. Modulation Doped GaAs-Ga1-xAlxAs Heterostructures Grown by Atmospheric Pressure MOVPE
2. Growth of high-purity GaAs epilayers by MOCVD and their applications to microwave MESFET's
3. Properties of Epitaxial GaAs Layers from a Triethyl Gallium and Arsine System
4. Reduced Carbon Contamination in OMVPE Grown GaAs and AlGaAs
5. Reduction of background doping in metalorganic vapor phase epitaxy of GaAs using triethylgallium at low reactor pressures
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1. Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources;Crystal Research and Technology;2005-11
2. Specific Materials;Organometallic Vapor-Phase Epitaxy;1999
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4. Zn incorporation and band gap shrinkage in p-type GaAs;Journal of Applied Physics;1997-11-15
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