Residual donor and acceptor incorporation in InP grown using trimethylindium and tertiarybutylphosphine
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.352344
Reference16 articles.
1. Control of residual impurity incorporation in tertiarybutylarsine-grown GaAs
2. Organometallic vapor phase epitaxial growth of InP using new phosphorus sources
3. MOVPE growth of InP using isobutylphosphine and tert-butylphosphine
4. Use of tertiarybutylphosphine for the growth of InP and GaAs1-xPx
5. High quality InP layers grown by organometallic vapor phase epitaxy using tertiarybutylphosphine and phosphine
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Residual Shallow Donor- and Acceptor-Impurities in SSD- and LEC-Grown High-Purity InP Crystals;Defect and Diffusion Forum;2001-11
2. Si-doping of MOVPE grown InP and GaAs by using the liquid Si source ditertiarybutyl silane;Journal of Crystal Growth;1998-12
3. Surface morphology and growth rate variation of InP on patterned substrates using tertiarybutylphosphine;Journal of Crystal Growth;1998-07
4. Characterization of InP grown by LEC using glassy carbon, silica and PBN crucibles;Journal of Crystal Growth;1998-03
5. Silicon doping of InGaAs grown by MOVPE using tertiarybutylarsine;Journal of Crystal Growth;1997-10
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