Subject
General Physics and Astronomy
Cited by
37 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO2 and SrTiO3 crystals;Journal of Applied Physics;2024-01-25
2. Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals;Journal of Crystal Growth;2023-12
3. Surface defects in 4H-SiC: properties, characterizations and passivation schemes;Semiconductor Science and Technology;2023-06-08
4. The role of boron related defects in limiting charge carrier lifetime in 4H–SiC epitaxial layers;APL Materials;2023-03-01
5. Effect of the Oxidation Process on Carrier Lifetime and on SF Defects of 4H SiC Thick Epilayer for Detection Applications;Micromachines;2022-06-30