Electron transport in N-polar GaN-based heterostructures-Reference-Cited by-同舟云学术

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Electron transport in N-polar GaN-based heterostructures

Published:2019-04-22 Issue:16 Volume:114 Page:162102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rakoski Alexa¹^ORCID,Diez Sandra²,Li Haoran³,Keller Stacia³,Ahmadi Elaheh⁴^ORCID,Kurdak Çağlıyan¹

Affiliation:

1. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, Santa Barbara, California 93106, USA

4. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

National Science Foundation

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5090233

Reference33 articles.

1. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

2. N-Polar Deep Recess MISHEMTs with Record 2.9 W/mm at 94 GHz

3. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

4. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

5. N-Polar AlGaN/GaN MIS-HEMTs on SiC with a 16.7 W/mm power density at 10 GHz using an Al2O3 based etch stop technology for the gate recess

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1. Laser lift-off technique for applications in III-N microelectronics: A review;Microelectronic Engineering;2024-07

2. Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy;physica status solidi (a);2024-06-27

3. Investigation on the passivation at the GeOx/Ge interface trap with high oxidation state in GeOx formed by ozone oxidation;Journal of Materials Science: Materials in Electronics;2023-10

4. N-Polar GaN Deep Recess HEMT With Atomic Layer Deposition HfO₂ as Gate Insulator;IEEE Transactions on Electron Devices;2023-09

5. Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching;Frontiers in Physics;2022-10-26

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