Sulfur passivation of GaAs metal-semiconductor field-effect transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1331642
Reference20 articles.
1. Dramatic enhancement in the gain of a GaAs/AlGaAs heterostructure bipolar transistor by surface chemical passivation
2. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
3. As2S3/GaAs, a new amorphous/crystalline heterojunction for the III‐V semiconductors
4. S2Cl2 treatment: A new sulfur passivation method of GaAs surface
5. Enhancement of photoluminescence intensity of GaAs with cubic GaS chemical vapor deposited using a structurally designed single‐source precursor
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