Corona discharge supersonic free-jet for III–V nitride growth via A 3Σu+ metastable nitrogen molecules
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1331646
Reference45 articles.
1. Group III nitride semiconductors for short wavelength light-emitting devices
2. Growth of GaN on sapphire (0001) using a supersonic jet of plasma‐generated atomic nitrogen
3. Some aspects of GaN growth on GaAs(100) substrates using molecular beam epitaxy with an RF activated nitrogen-plasma source
4. Atomic nitrogen production in a high efficiency microwave plasma source
5. Atomic nitrogen production in a molecular-beam epitaxy compatible electron cyclotron resonance plasma source
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