1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric-Reference-Cited by-同舟云学术

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1/f noise analysis in high mobility polymer-based OTFTs with non-fluorinated dielectric

Published:2019-06-17 Issue:24 Volume:114 Page:243301
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Muhea Wondwosen E.¹^ORCID,Romanjek K.²,Mescot X.³,Theodorou C. G.³^ORCID,Charbonneau M.²,Mohamed F.⁴,Ghibaudo G.³^ORCID,Iñiguez B.¹^ORCID

Affiliation:

1. Department of Electrical Electronic Engineering and Automation, Universitat Rovira i Virgili, Tarragona 43007, Spain

2. Université Grenoble Alpes, CEA-LITEN, 17 rue des Martyrs, Grenoble Cedex 38054, France

3. IIMEP-LAHC, Univ. Grenoble Alpes, Univ. Savoie Mont Blanc, CNRS, Grenoble INP, Grenoble 38000, France

4. Silvaco France (ex-Infiniscale), 55 rue Blaise Pascal, Montbonnot St Martin 38330, France

Funder

FI-Agaur catalan government scholarship program

MSCA-RISE-2014

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5093266

Reference29 articles.

1. Organic Field-Effect Transistors

2. Organic thin-film transistors

3. Organic Thin-Film Transistors for Chemical and Biological Sensing

4. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

5. Electrical mobility in organic thin-film transistors determined by noise spectroscopy

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1. Exploring Low-Frequency Noise Behavior in Vertically Structured Organic Schottky Photodiodes;2024 Conference of Science and Technology for Integrated Circuits (CSTIC);2024-03-17

2. Compact model for the bias-depended low-frequency noise in organic thin-film transistors due to carrier-number and mobility-fluctuation effects;Organic Electronics;2023-09

3. THM-OTFT: A Complete Physics-Based Verilog-A Compact Model for Short-Channel Organic Thin-Film Transistors;IEEE Journal of the Electron Devices Society;2023

4. Analysis of Low-Frequency Noise in Quantum Dot/Metal-Oxide Phototransistors With Metal Chalcogenide Interfaces;IEEE Electron Device Letters;2022-09

5. High-Mobility, Low-Voltage Programmable/Erasable Ferroelectric Polymer Transistor Nonvolatile Memory Based on a P(VDF-TrFE)/PMMA Bilayer Gate Insulator;IEEE Transactions on Electron Devices;2021-07

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