Fabrication and performance characteristics of InGaAsP multiquantum well double channel planar buried heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95835
Reference22 articles.
1. Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers
2. Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers
3. Auger recombination effect on threshold current of InGaAsP quantum well lasers
4. Auger recombination effect on threshold current of InGaAsP quantum well lasers
5. Gain and carrier lifetime measurements in AlGaAs multiquantum well lasers
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1. Nano-Scale Architecture of Quantum-Size Structures at the Growth from Quaternary In–As–Sb–P Liquid Phase on InAs(100) Substrate;Journal of Contemporary Physics (Armenian Academy of Sciences);2022-05-27
2. Нано-архитектура кванторазмерных структур при выращивании из четырехкомпонентной In–As–Sb–P жидкой фазы на подложке InAs(100);Proceedings of NAS RA. Physics;2022-05-16
3. Growth and characterization of cooperative quantum dot chains in quaternary InAsSbP material system;AIP Advances;2013-05
4. Room temperature magnetoelectric properties of type-II InAsSbP quantum dots and nanorings;Applied Physics Letters;2012-01-16
5. Gain-Switched Pulse Response of Quantum-Well Lasers;IEEE Journal of Quantum Electronics;2008-10
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