Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition
Author:
Affiliation:
1. ABB Corporate Research, Segelhofstrasse 1K, 5405 Baden-Dättwil, Switzerland
2. Department of Nanosystem Sciences, Yokohama City University, 236-0027 Yokohama, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5029254
Reference35 articles.
1. Self-compensation due to point defects in Mg-doped GaN
2. Shallow versus Deep Nature of Mg Acceptors in Nitride Semiconductors
3. High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing
4. Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-Type Conductivity in a p-GaN/u-GaN Alternating-Layer Nanostructure
5. Computationally predicted energies and properties of defects in GaN
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