Randomly oriented Angstrom‐scale microroughness at the Si(100)/SiO2interface probed by optical second harmonic generation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111711
Reference19 articles.
1. A survey of non-destructive surface characterization methods used to insure reliable gate oxide fabrication for silicon IC devices
2. Dependence of thin-oxide films quality on surface microroughness
3. Surface properties probed by second-harmonic and sum-frequency generation
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5. Influence of surface roughness on the electrical properties of Si–SiO2 interfaces and on second-harmonic generation at these interfaces
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