Photoelectrochemical etching of n-type 4H silicon carbide
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1768612
Reference39 articles.
1. J. W. Faust, Jr.The Etching of Silicon Carbide(Pergamon, Oxford, 1960), p. 403.
2. Photoelectrochemical conductivity selective etch stops for SiC
3. Laser‐Assisted Photoelectrochemical Etching of n‐type Beta ‐ SiC
4. Direct observation of porous SiC formed by anodization in HF
5. Characterization of nanocrystallites in porousp‐type 6H‐SiC
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