Mechanisms leading to erratic snapback behavior in bipolar junction transistors with base emitter shorted
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1874294
Reference27 articles.
1. Breakdown of transistors in Marx bank circuit
2. Boundary conditions between current mode and thermal mode second breakdown in epitaxial planar transistors
3. Reverse bias instabilities in bipolar power transistors with cellular layout
4. Power and energy limitations of bipolar transistors imposed by thermal-mode and current-mode second-breakdown mechanisms
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3. Fast Ionization-Front-Induced Anomalous Switching Behavior in Trigger Bipolar Transistors of Marx-Bank Circuits Under Base-Drive Conditions;IEEE Transactions on Plasma Science;2018-06
4. Switching Mechanisms Triggered by a Collector Voltage Ramp in Avalanche Transistors With Short-Connected Base and Emitter;IEEE Transactions on Electron Devices;2016-08
5. Modeling Erratic Behavior Due to High Current Filamentation in Bipolar Structures Under Dynamic Avalanche Conditions;IEEE Transactions on Electron Devices;2016
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