Hydrogen in insulating oxide Y3Al5O12 strongly narrows the band gap-Reference-Cited by-同舟云学术

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Hydrogen in insulating oxide Y3Al5O12 strongly narrows the band gap

Published:2014-12 Issue:22 Volume:105 Page:221110
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Winarski D.¹,Persson C.²,Selim F. A.¹³

Affiliation:

1. Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43403, USA

2. Department of Physics, University of Oslo, P.O. Box 1048 Blindern, No-0316 Oslo, Norway

3. Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43403, USA

Funder

SNIC and Notur

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4903343

Reference36 articles.

1. Hydrogen in semiconductors and insulators

2. Universal alignment of hydrogen levels in semiconductors, insulators and solutions

3. Hydrogen in semiconductors

4. Doping of chalcopyrites by hydrogen

5. n-type doping of oxides by hydrogen

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