Effect of “bamboo” grain boundaries on the maximum electromigration-induced stress in microelectronic interconnect lines-Reference-Cited by-同舟云学术

Effect of “bamboo” grain boundaries on the maximum electromigration-induced stress in microelectronic interconnect lines

Published:1998-04 Issue:7 Volume:83 Page:3595-3599
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Gleixner R. J.,Nix W. D.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.366576

Reference6 articles.

1. Electromigration and stress-induced voiding in fine Al and Al-alloy thin-film lines

2. 30 Years of Electromigration Research: A Grand Masters' Perspective

3. O. Kraft, M. Bauer, and E. Arzt, in Stress-Induced Phenomena in Metallization: 3rd International Workshop, edited by P. S. Ho, J. Bravman, C.Y. Li and J. Sanchez [ AIP Conf. Proc. APCPCSNo. 373 (1996)], pp. 131–142.

4. Electromigration in thin aluminum films on titanium nitride

5. Stress evolution due to electromigration in confined metal lines

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