Sub‐10 nm lithography and development properties of inorganic resist by scanning electron beam-Reference-Cited by-同舟云学术

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Sub‐10 nm lithography and development properties of inorganic resist by scanning electron beam

Published:1995-05-29 Issue:22 Volume:66 Page:3064-3066
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fujita J.,Watanabe H.,Ochiai Y.,Manako S.,Tsai J. S.,Matsui S.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.114279

Reference4 articles.

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3. Study on resist performance of chemically amplified molecular resist based on noria derivative and calixarene derivative;SPIE Proceedings;2014-03-27

4. Negative-tone chemically amplified molecular resist based on novel fullerene derivative for nanolithography;SPIE Proceedings;2010-03-11

5. High resolution, high sensitivity inorganic resists;Microelectronic Engineering;2009-04

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