Accurate calculation of field and carrier distributions in doped semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4723671
Reference9 articles.
1. Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diode
2. S. M. Sze, Physics of Semiconductor Devices, 3rd ed. (John Wiley & Sons, New Jersey, 2007) pp. 80–144.
3. R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits, 3rd ed. (John Wiley & Sons, California, 2002) pp. 165–172.
4. On approaches to the built-in electric-field calculations in shallow silicon n+-p junctions
5. Nanoscale Free-Carrier Profiling of Individual Semiconductor Nanowires by Infrared Near-Field Nanoscopy
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