Theoretical calculations of Debye length, built-in potential and depletion layer width versus dopant density in a heavily doped p-n junction diode
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Empirical approximations for the Fermi energy in a semiconductor with parabolic bands
2. The effect of position‐dependent dielectric constant on the electric field and charge density in ap‐njunction
3. Band-gap narrowing in heavily doped many-valley semiconductors
4. Dielectric Anomaly and the Metal-Insulator Transition inn-Type Silicon
5. Comparison of band‐gap shrinkage observed in luminescence fromn+‐Si with that from transport and optical absorption measurements
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