Hybrid growth of InGaAsP double‐channel planar buried heterostructure lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95892
Reference9 articles.
1. Gas source molecular beam epitaxy of GaxIn1−xPyAs1−y
2. GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy
3. λ≊1.5 μm InGaAsP ridge lasers grown by gas source molecular beam epitaxy
4. (AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth
5. MBE-grown InGaAs/InP BH lasers with LPE burying layers
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optoelectronic Devices;Gas Source Molecular Beam Epitaxy;1993
2. Trichloride-Hydride Vpe: A Hybrid Regrowth Process for III-V Epitaxial Heterostructures;MRS Proceedings;1989
3. 1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures;Journal of Applied Physics;1988-02-15
4. Modified double‐channel planar‐buried heterostructure laser with improved high‐temperature stability;Journal of Applied Physics;1987-07
5. Reflection noise in index-guided InGaAsP lasers;IEEE Journal of Quantum Electronics;1986-02
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