Homoepitaxial growth of ZnSe on dry‐etched substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101048
Reference12 articles.
1. Materials growth and its impact on devices from wide band gap II–VI compounds
2. The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs
3. Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers
4. Homo- and heteroepitaxial growth of high quality ZnSe by molecular beam epitaxy
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1. Epitaxial growth of thin films and quantum structures of II–VI visible-bandgap semiconductors;Molecular Beam Epitaxy;2013
2. Characterization of the CH4/H2/Ar high density plasma etching process for ZnSe;Journal of Electronic Materials;2001-05
3. Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000
4. Citric Acid Etching of ZnSe Surface and Application to the Homoepitaxy by Molecular Beam Epitaxy;Japanese Journal of Applied Physics;1998-06-15
5. ZnCdSe/ZnSe quantum well wires fabricated by reactive ion etching and wet chemical treatment;Semiconductor Science and Technology;1998-01-01
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