Effect of biaxial strain on exciton luminescence of heteroepitaxial ZnSe layers
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.38.12465/fulltext
Reference17 articles.
1. Coherent Growth of ZnSe on GaAs by MOCVD
2. The effect of lattice deformation on optical properties and lattice parameters of ZnSe grown on (100)GaAs
3. Observation of strain effects and evidence of gallium autodoping in molecular‐beam‐epitaxial ZnSe on (100)GaAs
4. Effect of elastic strain on the energy band gap in heteroepitaxially grown ZnSe
5. Energy band‐gap shift with elastic strain in GaxIn1−xP epitaxial layers on (001) GaAs substrates
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