Kinetics of thermal annealing in strained ultrathin Si/Ge superlattices on vicinal Si(100) studied by Raman scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363051
Reference19 articles.
1. Electronic properties of the (100) (Si)/(Ge) strained-layer superlattices
2. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge
3. Photoluminescence in short-period Si/Ge strained-layer superlattices
4. New optical transitions in strained Si-Ge superlattices
5. New optical transitions in strained Si-Ge superlattices
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