Dependence of crystal structure and work function of WNx films on the nitrogen content
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2349313
Reference19 articles.
1. The International Technology Roadmap for Semiconductors (Semiconductor Industry Association, San Jose, 2001), Front End Processes Section, p. 25.
2. Electrical Characteristics and Thermal Stability of W, WN[sub x], and TiN Barriers in Metal/Ta[sub 2]O[sub 5]/Si Gate Devices
3. Thermally Robust HfN Metal as a Promising Gate Electrode for Advanced MOS Device Applications
4. Electron photoemission from conducting nitrides (TiNx,TaNx) into SiO2 and HfO2
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