Assessment of surface damage and sidewall implantation in AlGaN-based high electron mobility transistor devices caused during focused-ion-beam milling
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3006626
Reference23 articles.
1. Applications of focused ion beam microscopy to materials science specimens
2. Introduction to Focused Ion Beams
3. Conventional and back-side focused ion beam milling for off-axis electron holography of electrostatic potentials in transistors
4. Surface damage formation during ion-beam thinning of samples for transmission electron microscopy
5. The Correlation between Ion Beam/Material Interactions and Practical FIB Specimen Preparation
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