Raman scattering and nuclear surface characterization of aged porous silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360027
Reference40 articles.
1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers
2. The origin of visible luminescencefrom “porous silicon”: A new interpretation
3. Time resolved photoluminescence of porous silicon: Evidence for tunneling limited recombination in a band of localized states
4. Visible luminescence from silicon wafers subjected to stain etches
5. Evidence for quantum confinement in porous silicon from soft x‐ray absorption
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Silicon nanocrystal formation in annealed silicon-rich silicon oxide films prepared by plasma enhanced chemical vapor deposition;Journal of Applied Physics;2007-06
2. Width of Raman Line from Porous Silicon Independent of Total Charge Consumed During Anodization;International Journal of Nanoscience;2003-02
3. A comparative study of two ion beam techniques used in the analysis of porous silicon;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-08
4. Polarization effects on the Raman and photoluminescence spectra of porous silicon layers;Journal of Raman Spectroscopy;1999-01
5. Optical Properties of a Low Dimensional Silicon System: Porous Silicon;Optical Spectroscopy of Low Dimensional Semiconductors;1997
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