Affiliation:
1. Department of Electrical Engineering, Akashi College of Technology, Akashi, Hyogo 674-8501, Japan
Abstract
We investigated the Raman spectra as a function of the total electric charge consumed in forming porous silicon. It was found that the Raman peak shifted to the lower wave number side as the total electric charge increased. However, the width of the Raman line was insensitive to the total electric charge. It shows the size of nanocrystallites can be widely ranged regardless of the degree of electrochemical reactions during anodization.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology