Highly sensitive photo-detectors for the ultra-violet wavelength range based on a dielectric stack and a silicon on insulator substrate-Reference-Cited by-同舟云学术

Highly sensitive photo-detectors for the ultra-violet wavelength range based on a dielectric stack and a silicon on insulator substrate

Published:2019-02-18 Issue:7 Volume:114 Page:073504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mikhelashvili V.¹²^ORCID,Shneider Y.¹,Sherman A.¹,Yofis S.¹,Ankonina G.²,Eyal O.¹²^ORCID,Khanonkin I.¹²^ORCID,Eisenstein G.¹²

Affiliation:

1. Department of Electrical Engineering, Technion, Haifa 32000, Israel

2. Russell Berrie Nanotechnology Institute, Technion, Haifa 32000, Israel

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5074167

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2. Development of ${\hbox{Al}}_{\scriptscriptstyle 0.8} {\hbox{Ga}}_{\scriptscriptstyle 0.2}{\hbox{As}}$ Photodiodes for Use in Wide Band-Gap Solid-State Photomultipliers

3. ZnO-based resonant cavity enhanced metal–semiconductor–metal ultraviolet photodetectors

4. 4H–SiC Metal–Semiconductor–Metal Ultraviolet Photodetectors in Operation of 450 $^{\circ}\hbox{C}$

5. High-Speed, High-Efficiency, Large-Area p-i-n Photodiode for Application to Optical Interconnects from 0.85 to 1.55 μm Wavelengths

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