Effect of post deposition annealing on the optical properties of HfOxNy films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2202689
Reference16 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Thermal stability and electrical characteristics of ultrathin hafnium oxide gate dielectric reoxidized with rapid thermal annealing
3. Effect of heat treatment on structural, optical and mechanical properties of sputtered TiOxNy films
4. Effect of N incorporation on boron penetration from p+ polycrystalline-Si through HfSixOy films
5. Interfacial growth in HfOxNy gate dielectrics deposited using [(C2H5)2N]4Hf with O2 and NO
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