Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Structural, optical, and electrical properties of unintentionally doped NiO layers grown on MgO by plasma-assisted molecular beam epitaxy

Published:2018-05-21 Issue:19 Volume:123 Page:195301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Budde Melanie¹^ORCID,Tschammer Carsten¹,Franz Philipp¹,Feldl Johannes¹,Ramsteiner Manfred¹,Goldhahn Rüdiger²^ORCID,Feneberg Martin²^ORCID,Barsan Nicolae³,Oprea Alexandru³,Bierwagen Oliver¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, D-10117 Berlin, Germany

2. Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

3. Institut für Physikalische und Theoretische Chemie, Eberhard Karls Universität Tübingen, Auf der Morgenstelle 15, 72076 Tübingen, Germany

Funder

Leibniz-Gemeinschaft

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5026738

Reference51 articles.

1. UV-detector based on pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO/n-ZnO

2. Dielectric Properties of Cobalt Oxide, Nickel Oxide, and Their Mixed Crystals

3. Electronic and transport properties of Li-doped NiO epitaxial thin films

4. Character of the insulating state in NiO: A mixture of charge-transfer and Mott-Hubbard character

5. Noncubic Behavior of Antiferromagnetic Transition-Metal Monoxides with the Rocksalt Structure

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