Electronic and transport properties of Li-doped NiO epitaxial thin films-Reference-Cited by-同舟云学术

Electronic and transport properties of Li-doped NiO epitaxial thin films

Published:2018 Issue:9 Volume:6 Page:2275-2282
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhang J. Y.¹²³⁴⁵,Li W. W.⁶⁷⁸⁹,Hoye R. L. Z.⁶⁷⁸⁹^ORCID,MacManus-Driscoll J. L.⁶⁷⁸⁹,Budde M.¹⁰¹¹¹²^ORCID,Bierwagen O.¹⁰¹¹¹²,Wang L.¹³¹⁴¹⁵¹⁶¹⁷,Du Y.¹³¹⁴¹⁵¹⁶¹⁷,Wahila M. J.¹⁸¹⁹²⁰¹⁷,Piper L. F. J.¹⁸¹⁹²⁰¹⁷^ORCID,Lee T.-L.²¹²²²³⁹,Edwards H. J.²⁴²⁵²⁶⁹,Dhanak V. R.²⁴²⁵²⁶⁹,Zhang K. H. L.¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemical and Biochemical Engineering

2. College of Chemistry and Chemical Engineering

3. Xiamen University

4. Xiamen 361005

5. P. R. China

6. Department of Materials Science & Metallurgy

7. University of Cambridge

8. Cambridge

9. UK

10. Paul-Drude-Institut für Festkörperelektronik

11. DE-10117 Berlin

12. Germany

13. Physical Sciences Division

14. Physical & Computational Sciences Directorate

15. Pacific Northwest National Laboratory

16. Richland

17. USA

18. Materials Science & Engineering

19. Binghamton University

20. Binghamton

21. Diamond Light Source Ltd.

22. Harwell Science and Innovation Campus

23. Didcot

24. Department of Physics

25. University of Liverpool

26. Liverpool L69 3BX

Abstract

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.

Funder

University of Cambridge

Engineering and Physical Sciences Research Council

Leibniz-Gemeinschaft

Basic Energy Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/TC/C7TC05331B

Reference72 articles.