In situtransmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1775297
Reference16 articles.
1. RAPID REVERSIBLE LIGHT‐INDUCED CRYSTALLIZATION OF AMORPHOUS SEMICONDUCTORS
2. Summary Abstract: Thin films for optical recording applications
3. Rapid‐phase transitions of GeTe‐Sb2Te3pseudobinary amorphous thin films for an optical disk memory
4. Microstructural changes in GeSbTe film during repetitious overwriting in phase‐change optical recording
5. Electron diffraction and high-resolution transmission electron microscopy of the high temperature crystal structures of GexSb2Te3+x (x=1,2,3) phase change material
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