Study of photoluminescence at 3.310 and 3.368 eV in GaN/sapphire(0001) and GaN/GaAs(001) grown by liquid-target pulsed-laser deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1476058
Reference22 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. Low temperature sapphire nitridation: A clue to optimize GaN layers grown by molecular beam epitaxy
4. On the nature of the 3.41eV luminescence in hexagonal GaN
5. Growth of epitaxial GaN films by pulsed laser deposition
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