Low-temperature breakdown properties of AlxGa1−xAs avalanche photodiodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1506012
Reference16 articles.
1. Temperature investigation of dark current and its electrical noise in GaAs/AlGaAs multiquantum well photodiodes
2. Thermoelectric Cooling and Power Generation
3. Temperature dependence of ionization rates in AlxGa1-xAs
4. Temperature dependence of the ionization coefficients of Al/sub x/Ga/sub 1-x/As
5. Multiplication noise of AlxGa1−xAs avalanche photodiodes with high Al concentration and thin multiplication region
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3. Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes;Optics Express;2017-12-22
4. Temperature dependence of avalanche multiplication and breakdown voltage in Al0.52In0.48P;Journal of Applied Physics;2014-02-14
5. AlAsSb Avalanche Photodiodes With a Sub-mV/K Temperature Coefficient of Breakdown Voltage;IEEE Journal of Quantum Electronics;2011-11
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