Investigation of temperature and temporal stability of AlGaAsSb avalanche photodiodes
Author:
Funder
Engineering and Physical Sciences Research Council (EPSRC)
H2020 Marie Skłodowska-Curie Actions (MSCA)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference21 articles.
1. Impact ionization coefficient and energy distribution function in polar and nonpolar semiconductors
2. Temperature dependence of the impact ionization coefficients in GaAs, cubic SiC, and zinc-blende GaN
3. A New Planar InGaAs–InAlAs Avalanche Photodiode
4. Avalanche Noise Characteristics in Submicron InP Diodes
5. Temperature Dependence of Avalanche Breakdown in InP and InAlAs
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1. InGaAs/AlInAsSb avalanche photodiodes with low noise and strong temperature stability;APL Photonics;2023-11-01
2. Surface passivation of random alloy AlGaAsSb avalanche photodiode;Electronics Letters;2023-09
3. Recombination processes in MBE grown Al0.85Ga0.15As0.56Sb0.44;AIP Advances;2023-04-01
4. Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes;Journal of Lightwave Technology;2022-09-01
5. A GaAsSb/AlGaAsSb Avalanche Photodiode With a Very Small Temperature Coefficient of Breakdown Voltage;Journal of Lightwave Technology;2022-07-15
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