Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes-Reference-Cited by-同舟云学术

Temperature Dependence of Avalanche Breakdown of AlGaAsSb and AlInAsSb Avalanche Photodiodes

Published:2022-09-01 Issue:17 Volume:40 Page:5934-5942
ISSN:0733-8724
Container-title:Journal of Lightwave Technology
language:
Short-container-title:J. Lightwave Technol.

Author:

Guo Bingtian¹^ORCID,Ahmed Sheikh Z.¹^ORCID,Xue Xingjun¹,Rockwell Ann-Kathryn²^ORCID,Ha Jaedu³,Lee Seunghyun⁴^ORCID,Liang Baolai⁵,Jones Andrew H.¹^ORCID,McArthur J. Andrew²^ORCID,Kodati Sri H.⁴,Ronningen Theodore J.⁴^ORCID,Krishna Sanjay⁴^ORCID,Kim Jong Su³,Bank Seth R.²^ORCID,Ghosh Avik W.¹^ORCID,Campbell Joe C.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA

2. Department of Electrical and Computer Engineering, University of Texas, Austin, TX, USA

3. Department of Physics, Yeungnam University, Gyeongsan, South Korea

4. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH, USA

5. California NanoSystems Institute, University of California, Los Angeles, CA, USA

Funder

Directed Energy–Joint Technology Office

Army Research Office

Defense Advanced Research Projects Agency

National Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/50/9867899/9803034-aam.pdf

Reference31 articles.

1. Temperature-dependent band gaps in several semiconductors: from the role of electron–phonon renormalization

2. Isotope effects on the optical spectra of semiconductors

3. Excess Avalanche Noise in $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As}$

4. Avalanche Noise Characteristics in Submicron InP Diodes

5. Al_xIn_1-xAs_ySb_1-y photodiodes with low avalanche breakdown temperature dependence

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