Calculation of the hole concentration in boron-doped diamond
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369272
Reference25 articles.
1. The nature of the acceptor centre in semiconducting diamond
2. Comparison of the electrical properties of simultaneously deposited homoepitaxial and polycrystalline diamond films
3. Electrical characterization of homoepitaxial diamond films doped with B, P, Li and Na during crystal growth
4. Electrical conduction in homoepitaxial, boron-doped diamond films
5. Boron implantation/in situ annealing procedure for optimal p ‐type properties of diamond
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