Asymmetric spin relaxation induced by residual electron spin in semiconductor quantum-dot-superlattice hybrid nanosystem
Author:
Affiliation:
1. Faculty of Information Science and Technology, Hokkaido University, Kita 14, Nishi 9, Kita-ku, Sapporo 060-0814, Japan
Funder
Japan Society for the Promotion of Science
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0010754
Reference34 articles.
1. Spin injection from (Ga,Mn)As into InAs quantum dots
2. Electrical spin pumping of quantum dots at room temperature
3. Electrical spin injection into p-doped quantum dots through a tunnel barrier
4. Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot
5. Spin relaxation of excitons in zero-dimensional InGaAs quantum disks
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2. Efficient Room-Temperature Operation of a Quantum Dot Spin-Polarized Light-Emitting Diode under High-Bias Conditions;Physical Review Applied;2023-02-21
3. Efficient Room‐Temperature Voltage Control of Picosecond Optical Spin Orientation Using a III‐V Semiconductor Nanostructure;Advanced Electronic Materials;2022-08-15
4. Room-Temperature Spin-Transport Properties in an In0.5Ga0.5As Quantum Dot Spin-Polarized Light-Emitting Diode;Physical Review Applied;2021-07-14
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