Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation-Reference-Cited by-同舟云学术

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Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

Published:2017-12-11 Issue:24 Volume:111 Page:241902
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Miller Ruth A.¹,So Hongyun²,Chiamori Heather C.¹,Dowling Karen M.³,Wang Yongqiang⁴,Senesky Debbie G.¹³

Affiliation:

1. Department of Aeronautics and Astronautics, Stanford University, Stanford, California 94305, USA

2. Department of Mechanical Engineering, Hanyang University, Seoul 04763, South Korea

3. Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

4. Material Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

Funder

National Aeronautics and Space Administration

DOE | LDRD | Los Alamos National Laboratory

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5005797

Reference31 articles.

1. The Near-Earth Space Radiation Environment

2. Review—Ionizing Radiation Damage Effects on GaN Devices

3. Radiation hardness of gallium nitride

4. GaN-Based High Temperature and Radiation-Hard Electronics for Harsh Environments

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